Ion Implantation Foundry Service
IBS is the perfect partner for supporting your ion implantation needs.
Whether it is production or R&D, IBS has a solution to fit all customer’s needs
Innovative Ion Implantation
A new world where Ion implantation is deeply required
- SiC implantation up to 600 °C
- 3D conformal doping
- Surface treatment ( planar to 3D )
Get access to a large scope of work
IBS is the leading ion implant service
From ultra low energy to high doses on most wafer types and sizes
( Sample to 12" )
with a large variety of species
The only world foundry for plasma immersion ion implant
Plasma immersion ion implantation
- Simultaneous implantation on the whole wafer
- Conformal 3D implantation
- Ultra low energy (down to 30 eV) with no risk of energy contamination
- Hot implant
From our two production facilities in France and the UK, IBS operates a world class ion implantation and full process manufacturing line service.
IBS can process production volumes from sample to 12″ diameter substrates, as well as custom shapes, thicknesses and materials.
Available
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1
H
Hydrogen
2
He
Helium
3
Li
Lithium
4
Be
Beryllium
5
B
Boron
6
C
Carbon
7
N
Nitrogen
8
O
Oxygen
9
F
Fluorine
10
Ne
Neon
11
Na
Sodium
12
Mg
Magnesium
13
Al
Aluminium
14
Si
Silicon
15
P
Phosphorus
16
S
Sulfur
17
Cl
Chlorine
18
Ar
Argon
19
K
Potassium
20
Ca
Calcium
21
Sc
Scandium
22
Ti
Titanium
23
V
Vanadium
24
Cr
Chromium
25
Mn
Manganese
26
Fe
Iron
27
Co
Cobalt
28
Ni
Nickel
29
Cu
Copper
30
Zn
Zinc
31
Ga
Gallium
32
Ge
Germanium
33
As
Arsenic
34
Se
Selenium
35
Br
Bromine
36
Kr
Krypton
37
Rb
Rubidium
38
Sr
Strontium
39
Y
Yttrium
40
Zr
Zirconium
41
Nb
Niobium
42
Mo
Molybdenum
43
Tc
Technetium
44
Ru
Ruthenium
45
Rh
Rhodium
46
Pd
Palladium
47
Ag
Silver
48
Cd
Cadmium
49
In
Indium
50
Sn
Tin
51
Sb
Antimony
52
Te
Tellurium
53
I
Iodine
54
Xe
Xenon
55
Cs
Caesium
56
Ba
Barium
57
La
Lanthanum
58
Ce
Cerium
59
Pr
Praseodymium
60
Nd
Neodymium
61
Pm
Promethium
62
Sm
Samarium
63
Eu
Europium
64
Gd
Gadolinium
65
Tb
Terbium
66
Dy
Dysprosium
67
Ho
Holmium
68
Er
Erbium
69
Tm
Thulium
70
Yb
Ytterbium
71
Lu
Lutetium
72
Hf
Hafnium
73
Ta
Tantalum
74
W
Tungsten
75
Re
Rhenium
76
Os
Osmium
77
Ir
Iridium
78
Pt
Platinum
79
Au
Gold
80
Hg
Mercury
81
Tl
Thallium
82
Pb
Lead
83
Bi
Bismuth
84
Po
Polonium
85
At
Astatine
86
Rn
Radon
87
Fr
Francium
88
Ra
Radium
Molecular Ion
H2
Hydrogen
N2
Nitrogen
O2
Oxygen
BF2
Boron difluoride
SiF3
Silicon trifluoride
Request an element
Beamline implantation services
Production:
- Standard Processing: Fabless, ion implanter-less or additionnal production capacity without CapEx heavy investment
- Back-up: Breakdown, temporary overlay, wafer size upgrade…
R&D implantation:
- Specific processes: product development, test & evaluation
- Various substrates, shapes
- Exotic species
- Heated/cooled, various angles…
SiC implantation:
- From room temperature to +600 °C implant
- From samples to 6” wafer
- Si, B, Al, N, C, P and much more
- From 5 to 400 keV
- Specific SiC ion implant simulations
Plasma Immersion Ion Implant services (PIII)
PULSION®
- Available species:
• Doping: AsH3, PH3, BF3, B2H6
• Material modification: Ar, H2, He, CH4, SiH4, SiF4, Al, CF4, C2H2… - Wafer size: from samples up to 300 mm
- From medium to high doses
- Extremely low to medium acceleration voltage: 50 V – 20 kV
- Conformal doping for 3D
PIII & laser annealing combination
- Annealing (and diffusion) depth is controlled very precisely
- Room temperature doping
- Wafer integrity
- Junction depth from 10 nm to 15 nm
- Application: Back side implantation, power components
SCOPE OF WORK
Dose / Energy
Wafer Types
IBS can implant different types of wafers from sample to 12''
- Si
- Si thin wafers / Taiko wafers
- SiC
- GaN
- InP / GaAs
- InSb
- HgCdTe
- LiNbO3
- Sapphire / Diamond / Quartz
Turnkey services
With its line of equipment, IBS can produce ion implantation based on your requirement. Our fab operates with 2” to 300mm compatible systems.
Thanks to its various partnerships, IBS can propose a complete set of metrology tools:
ON LINE CHARACTERIZATION:
- mechanical profilometer
- Optical thickness measurment
- Sheet resistance + prober IBS
PHYSICO & DEFCT ANALYSIS:
- D-SIMS & ToF-SIMS
- Micro Auger & XPS
- Dual beam FIB & TEM
- IR Thermography
- Laser decapsulation
OFF LINE CHARACTERIZATION:
- Layers thicknesses & morphology
- Optical 3D Profilometer
- Micro Raman
- AFM Veeco
- SEM
IBS provides you with its skills and its know how to allow you to develop your own component
- Process simulation using SILVACO software and IBS in-house SiC implantation simulator