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Ion Beam Services (IBS) provides critical surface engineering solutions across a wide spectrum of industries.
From pioneering ultra-thin layer transfers to enabling the next generation of electric vehicle power electronics, our ion implantation expertise is the key to material innovation.
Silicon Carbide (SiC) is revolutionizing the power electronics industry, particularly for Electric Vehicles (EVs) and renewable energy. IBS is at the forefront of SiC processing, offering specialized solutions for high-performance power devices.
Hot Implantation: We provide industry-leading high-temperature implantation (up to 600°C) to minimize lattice damage and maximize dopant activation in SiC wafers.
Precision Control: Accurate depth profiling for Aluminum (P-type) and Nitrogen (N-type) doping to ensure superior breakdown voltage and low on-resistance.
EV Market Support: Supporting the mass production of SiC MOSFETs and Schottky barrier diodes.
Our H-Cut technology utilizes high-dose Hydrogen (proton) implantation to create precise cleavage planes within semiconductor materials, enabling advanced “lift-off” and thinning processes.
Precision Cleaving: Using Hydrogen ions to facilitate the transfer of ultra-thin layers of Silicon or other materials onto handle wafers.
Substrate Engineering: Essential for the fabrication of Silicon-on-Insulator (SOI) wafers and engineered substrates.
Kerf-loss Reduction: Minimizing material waste in high-value substrate manufacturing.
For the most advanced logic and memory nodes (300mm), IBS provides the precision required to handle complex architectures and shrinking dimensions.
Conformal Implantation: Utilizing PULSION® Plasma Immersion technology to achieve uniform doping on the sidewalls of FinFETs and vertical nanowires.
Ultra-Shallow Junctions (USJ): Delivering extremely low-energy implants to create junctions at the nanometer scale without short-channel effects.
300mm Excellence: Fully automated processes optimized for high-volume 300mm (12-inch) FAB requirements.
Compound semiconductors like Gallium Nitride (GaN), GaAs, and InP are vital for 5G, RF communications, and photonics. IBS provides the specific ion beam expertise needed for these sensitive materials.
Isolation Implantation: High-energy implantation to create isolation regions in RF devices, reducing parasitic capacitance.
GaN-on-Si / GaN-on-SiC: Supporting the growth of the GaN power market through specialized doping and material modification.
LED & Laser Engineering: Enhancing the efficiency of optoelectronic devices through targeted ion species
While the world chases the smallest nodes, “Mature Silicon” (150mm/200mm) remains the backbone of the IoT, automotive, and industrial sectors.
MEMS & Sensors: Tailored ion implantation for pressure sensors, accelerometers, and micro-actuators.
Analog & Power ICs: Cost-effective, high-reliability doping for MOSFETs, IGBTs, and standard analog components.
Flexibility: Rapid turnaround for 6-inch and 8-inch wafer production lines.
IBS acts as a global bridge between academic research and industrial reality. We support laboratories and R&D centers in exploring the boundaries of material science.
Exotic Ion Species: Access to over 65 ions, including rare earths and noble gases, for experimental material modification.
New Material Exploration: Implantation into polymers, ceramics, and 2D materials (Graphene).
Feasibility Studies: Small-batch processing to validate new doping recipes before scaling to production
At IBS, we understand that uptime is critical. Our global support network is dedicated to providing rapid, expert assistance to maintain the performance of your ion beam equipment.
Your tailored customer area gives you access to our wide parts catalog and order history.