IBS confirms its position as an expert with the successful development of a specific and dedicated source to allow Al implantations up to 600KeV.
Such challenge offers new perspective to our clients, especially in the SiC applications, to implant their wafers for production volumes or R&d programs.
This capability is available for 4’’ and 6’’ wafers in automatic mode and can be combined with high temperature implant (up to 600°C).
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