Ion Beam Services (IBS) designs, manufactures, and reconfigures high-performance ion implantation systems.
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Whether you are developing next-generation materials in a laboratory or scaling up production in a high-volume FAB, our equipment portfolio delivers the precision and reliability required for modern semiconductor manufacturing.
Experience the precision of IBS technology before integration.
Proof of Concept: Test new ion species or dose recipes.
Confidentiality: Secure handling of proprietary designs and materials.
Full Characterization: Access to on-site metrology (SIMS, SRP, Metripol) to analyze results immediately.
Your tailored customer area gives you access to our wide parts catalog and order history.
Our state-of-the-art foundry services provide high-precision ion implantation for research, development, and high-volume production. We specialize in modifying the electrical, optical, and physical properties of materials at the atomic level.
Our Medium Current systems are the workhorses of the industry, designed for consistent performance in 24/7 production environments. We provide expertly refurbished and modernized tools from industry leaders like Applied Materials and Axcelis/Eaton.
Key Features for Production
Specialized handling for 200mm and 300mm wafers
Advanced scanning systems ensure ultra-precise dose distribution across the entire surface
Full SECS/GEM compatibility for seamless FAB integration
Expertly configured Applied Materials Precision 5000 and Axcelis NV-8250 series
Flexible configurations for diverse research and pilot-line requirements
In the R&D environment, flexibility is paramount. IBS provides Medium Current implanters specifically configured to handle a wide variety of substrates and non-standard processes
Research-Driven Capabilities
Capability to process small pieces, 2-inch, 4-inch, and 6-inch wafers on the same platform
From low-energy surface modification to deeper high-energy implants
Options for high-temperature implantation (up to 600°C) for Silicon Carbide (SiC) and other wide-bandgap materials
Easily switch between standard dopants and exotic ions for specialized research projects
Superior beam currents for source/drain doping and advanced surface engineering.
Our High Current systems are engineered to deliver high beam intensities without compromising wafer cooling or dose accuracy. These tools are ideal for high-dose implants such as pre-amorphization, source/drain doping, and heavy metal implantation.
Optimized beamlines to reduce energy contamination and maximize productivity
Advanced electrostatic chucks (e-chucks) and cooling systems to maintain substrate integrity during high-power implants
Systems such as the Applied Materials 9500 and Axcelis GSD series, fully refurbished and upgraded with modern control systems
The future of conformal doping
and ultra-shallow junctions
Revolutionizing Ion Implantation
Unmatched performance at extremely low energies (down to 30eV), critical for the 7nm node and beyond
Perfect for 3D structures like FinFETs, Nanowires, and Trench Capacitors, where traditional beamlines struggle with shadowing effects
Massive dose rates (up to 1e16 ions/cm²) achieved in seconds, regardless of wafer size
Ideal for PAI (Pre-Amorphization Implantation) and surface treatment of polymers and metals
