Demo Lab & Foundry
Supporting your ion implantation needs
Ion Beam Services (IBS) is the perfect partner for supporting your ion implantation needs,
whether it is production or R&D, IBS has a solution to fit all customer’s needs
Ion Implantation
IBS is the perfect partner for supporting your ion implantation needs.
Whether it is production or R&D,
IBS has a solution to fit all customer’s needs
From our two production facilities in France and the UK, IBS operates a world class ion implantation
and full process manufacturing line service. IBS can process production volumes
from 2” to 12″ diameter substrates, as well as custom shapes, thicknesses and materials.
Ion implanters tailored to your needs
Demo Request
Experience the precision of IBS technology before integration.
Proof of Concept: Test new ion species or dose recipes.
Confidentiality: Secure handling of proprietary designs and materials.
Full Characterization: Access to on-site metrology (SIMS, SRP, Metripol) to analyze results immediately.
Schedule your demo
industrial scale performance
Our Medium Current systems are the workhorses of the industry, designed for consistent performance in 24/7 production environments. We provide expertly refurbished and modernized tools from industry leaders like Applied Materials and Axcelis/Eaton.
Key Features for Production
Wafer Sizes
Specialized handling for 200mm and 300mm wafers
Exceptional Uniformity
Advanced scanning systems ensure ultra-precise dose distribution across the entire surface
Automation
Full SECS/GEM compatibility for seamless FAB integration
Supported Platforms
Expertly configured Applied Materials Precision 5000 and Axcelis NV-8250 series
Reliability for High-Volume FABs
Medium Current (R&d)
Versatility for Material Innovation
Flexible configurations for diverse research and pilot-line requirements
Adaptable Platforms for Research
In the R&D environment, flexibility is paramount. IBS provides Medium Current implanters specifically configured to handle a wide variety of substrates and non-standard processes
Research-Driven Capabilities
Multi-Substrate Handling
Capability to process small pieces, 2-inch, 4-inch, and 6-inch wafers on the same platform
Wide Energy Range
From low-energy surface modification to deeper high-energy implants
Temperature Control
Options for high-temperature implantation (up to 600°C) for Silicon Carbide (SiC) and other wide-bandgap materials
Custom Ion Sources
Easily switch between standard dopants and exotic ions for specialized research projects
Reliability for High-Volume FABs
High Current
Maximum Productivity for High-Dose Applications
Superior beam currents for source/drain doping and advanced surface engineering.
High-Dose Precision
Our High Current systems are engineered to deliver high beam intensities without compromising wafer cooling or dose accuracy. These tools are ideal for high-dose implants such as pre-amorphization, source/drain doping, and heavy metal implantation.
Beam Quality
Optimized beamlines to reduce energy contamination and maximize productivity
Thermal Management
Advanced electrostatic chucks (e-chucks) and cooling systems to maintain substrate integrity during high-power implants
Proven Reliability
Systems such as the Applied Materials 9500 and Axcelis GSD series, fully refurbished and upgraded with modern control systems
Plasma Immersion Ion Implantation (PIII)
PLASMA
pulsion®
The future of conformal doping
and ultra-shallow junctions
Revolutionizing Ion Implantation
Ultra-Shallow Junctions (USJ)
Unmatched performance at extremely low energies (down to 30eV), critical for the 7nm node and beyond
Conformal Doping
Perfect for 3D structures like FinFETs, Nanowires, and Trench Capacitors, where traditional beamlines struggle with shadowing effects
High Throughput
Massive dose rates (up to 1e16 ions/cm²) achieved in seconds, regardless of wafer size
Material Modification
Ideal for PAI (Pre-Amorphization Implantation) and surface treatment of polymers and metals